Effects of boron doping on carrier concentration of diamond film
Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Voltage-capacitance method
The absorption spectra, exponential gain coefficient, diffraction efficiency and effect carrier concentration of the crystal were measured.
In addition, with the carrier concentration and air velocity supply higher, EA and Ep will not decrease obviously.
The integrated intensity of the 950 nm emission strongly de-pends on the injected carrier concentration n in active layer (I∞n~3).
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
