GaAs laser terrain profiler
GaAs double-heterostructure photodetector
GaAs PN junction injection laser
Research of GaAs/InP Wafer Bonding Technology;
Advances in Microwave GaAs FET deviceandCircuit Technologies
Multi－gate GaAs MMIC DPDT Power Switches
Resolution characteristic of exponential-doping GaAs photocathodes
GaAs/InP and Si/GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic Devices
Progresses on GaAs-based Ⅲ-Ⅴ Multi-junction Solar Cells
Preparation and Measurements of InP/GaAs(100) Heteroepitaxy
Thermal Stress DistriBution of GaAs and InP Crystals in LEC Growth and of GaAs Crystal in LEFZ Growth;
Study of GaAs-Based Resonant Tunneling Piezo-resistive Acoustic Sensor;
GaAs-Based Infrared Photodetection and Photon Up-Conversion Devices
Research on Cleaning Process of GaAs Polished Wafer for LED
Virtual design for RHEED patterns of GaAs(001)_β 2(2×4) surface
Heteroepitaxial Growth of InP on GaAs Using Low-temperature InGaP Buffer Layers with Graded Composition
Symmetry Constraints of the Magic Angular Momentums and the Electronic Structures of GaAs Quantum Dot
Study on the model of quantum efficiency of reflective varied doping GaAs photocathode
Technique Research Status and Development Trends of GaAs Tandem Solar Cell;
Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)
The Study of Electrical Property Degradation of GaAs/Ge Solar Cells by Electron and Proton Co-Irradiation;
Study of electron spin diffusion transport in intrinsic GaAs quantum wells by time-and space-resolved absorbtion spectroscopy
Study on the Optimization of Parameters of Double Q-switched Lasers with AO(EO) and a GaAs Saturable Absorber
GaAs infrared searchlight with novel structure of a coaxial double reflective bowls was used in 1985 for police night vision device.
The advantages and disadvantages, technological features, application fields and prospect of GaAs monolithic microwave integrated circuits are discussed in this paper.
Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot
It lists and analyzes the operating principle and application of the single diode, double diode and single GaAs FET linearer and finds that they are all inconvenient to be adjusted.
This paper goes into the application of the GaAs Dual-Gate FET to the high frequency tuning-amplification and frequency conversion in a TV UHF channel selector and gives some experimental results.
在的生长温度下，通过分子束外延在GaAs表面生长得到体心立方结构金属Ni薄膜。
市售GaAs外延层的质量相当高，故其材料和界面起伏引起的损耗可忽略不计。
